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Trichlorosilane Properties | General | | Name | Trichlorosilane | | Chemical formula | HSiCl3 | | Appearance | Colourless liquid | | Physical | | Formula weight | 135.5 amu | | Melting point | 146 K (-127 °C) | | Boiling point | 305 K (32 °C) | | Density | 1.34 ×103 kg/m3 (liquid) | | Solubility | decomposes in water | | Thermochemistry | | ΔfH0gas | ? kJ/mol | | ΔfH0liquid | ? kJ/mol | | ΔfH0solid | ? kJ/mol | | S0gas, 1 bar | ? J/mol·K | | S0liquid, 1 bar | ? J/mol·K | | S0solid | ? J/mol·K | | Safety | | Ingestion | May cause nausea, vomiting, kidney damage. | | Inhalation | May cause burning in chest, dizziness, pulmonary edema, cardiac irregularity, kidney damage. | | Skin | Possible burns, especially on wet skin. | | Eyes | Produces burning and tearing with possible cornea damage. | | More info | Hazardous Chemical Database | | SI units were used where possible. Unless otherwise stated, standard conditions were used. Disclaimer and references | Trichlorosilane is a chemical compound containing silicon, hydrogen, and chlorine. At high temperatures, it decomposes to produce silicon, and as such, purified trichlorosilane is the principle source of ultrapure silicon in the semiconductor industry. In water, it rapidly decomposes to produce a silicone polymer while giving off hydrochloric acid. Because of its reactivity and wide availability, it is frequently used in the synthesis of silicon-containing organic compounds. Production Industrially, trichlorosilane is produced by blowing hydrogen chloride through a bed of silicon powder at 300°C. There, they combine to make trichlorosilane and hydrogen according to the chemical equation - Si + 3 HCl → HSiCl3 + H2
A properly designed reactor can achieve a yield of 80-90% trichlorosilane. The major byproducts are silicon tetrachloride (chemical formula SiCl4), hexachlorodisilane (Si2Cl6), and dichlorosilane (H2SiCl2), from which trichlorosilane can be separated by distillation. Reference |Semiconductors: Silicon: Substrate Manufacture: Polycrystalline Silicon Production
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